Publications of Prof. Baski

Biographical Info.          Publications          Research          Teaching          Service



Publications in Journals:
Total Citations in Web of Science (December 2013): 2,730

76. J.D. McNamara, M. Foussekis, A.A Baski, M.A. Reshchikov, "Low-temperature surface photovoltage in p-type GaN," J. Vac. Sci. Technol. B 32, 011209 (2014).

75. M. Foussekis, J.D. Ferguson, J.D. McNamara, A.A Baski, "Effects of polarity and surface treatment on Ga- and N-polar bulk GaN," J. Vac. Sci. Technol. B 30, 051210 (2012).

74. M. Foussekis, J.D. McNamara, A.A. Baski et al, "Temperature-dependent Kelvin probe measurements of band bending in p-type GaN," Appl. Phys. Lett. 101, 082104 (2012).

73. D. Ye, S. Moussa, J.D. Ferguson, A.A. Baski, "Highly Efficient Electron Field Emission from Graphene Oxide Sheets Supported by Nickel Nanotip Arrays," Nano Letters, 12, 3, 1265-1268 (2012).

72. M. Foussekis, A.A. Baski, M.A. Reshchikov, "Comparison of surface photovoltage behavior for n-type versus p-type GaN," J. Vac. Sci. Technol. B 29, 041205 (2011).

71. M.A. Reshchikov, M. Foussekis, A.A Baski, “Surface Photovoltage in undoped n-type GaN,” J. Appl. Phys., 107, 113535 (2010).

70. X. Ni, M. Wu, J. Lee, X. Li, A.A. Baski, Ü. Özgür, H. Morkoç, “Non-polar m-plane GaN on patterned Si(112) substrates by metalorganic chemical vapor deposition,” Appl. Phys. Lett. 95, 111102 (2009).

69. X. Ni, J. Lee, M. Wu, X. Li, R. Shimada, Ü. Özgür, A.A. Baski, H. Morkoç, T. Paskova, G. Mulholland, K.R. Evans, “Internal quantum efficiency of c-plane InGaN and m-plane InGaN on Si and GaN,” Appl. Phys. Lett. 95, 101106 (2009).

68. J.C. Moore, S.M. Kenny, C.S. Baird, H. Morkoç, A.A Baski, “Electronic behavior of the Zn- and O-polar ZnO surfaces studied using conductive atomic force microscopy,” J. Appl. Phys. 105, 116102 (2009).

67. C. Wingfield, A. Baski, M.F. Bertino, N. Leventis, D.P. Mohite, H. Lu, “Fabrication of sol-gel materials with anisotropic physical properties by photo-cross-linking,” Chem. Mater. 21, 2108–2114 (2009).

66. M. Foussekis, A.A. Baski, M.A. Reshchikov, “Photoadsorption and photodesorption for GaN,” Appl. Phys. Lett. 94, 162116 (2009).

65. X. Ni, U. Ozgur, A.A. Baski, H. Morkoç, L. Zhou, D.J. Smith, C.A. Tran, “Epitaxial lateral overgrowth of (1122) semipolar GaN on (1100) m-plane sapphire by metalorganic chemical vapor deposition,” Appl. Phys. Lett. 90, 182109 (2007).

64. J.C. Moore, J.L. Skrobiszewski, A.A. Baski, “Sublimation Behavior of SiO2 from Low and High-Index Silicon Surfaces,” J. Vac. Sci. Technol. A 25, 812 (2007).

63. S.A. Chevtchenko, M.A. Reshchikov, Q. Fan, X. Ni, Y.T. Moon, A.A. Baski, H. Morkoç, “Study of SiNx and SiO2 passivation of GaN surfaces,” J. Appl. Phys. 101, 113709 (2007).

62. J.C. Moore, V. Kasliwal, A.A. Baski, X. Ni, Ü. Özgür, H. Morkoç, “Local electronic and optical behavior of a-plane GaN grown via epitaxial lateral overgrowth,” Appl. Phys. Lett. 90, 011913 (2007).

61. I. Ahmad, V. Avrutin, H. Morkoç, J. C. Moore, A.A. Baski, “Effect of temperature on the growth of InAs/GaAs quantum dots grown on a strained GaAs layer,” J. of Nanoscience and Nanotechnology 7, 1–5 (2007).

60. X. Ni, Ü. Özgür, Y. Fu, N. Biyikli, J. Xie, A.A. Baski, H. Morkoç, Z. Liliental-Weber, “Defect reduction in (1120) a-plane GaN by two-stage epitaxial lateral overgrowth,” Appl. Phys. Lett. 89, 262105 (2006).

59. S.A. Chevtchenko, J.C. Moore, Ü. Özgür, X. Gu, A.A. Baski, H. Morkoç, “Comparative study of the (0001) and (0001) surfaces of ZnO,” Appl. Phys. Lett., 89, 182111 (2006).

58. S.A. Chevtchenko, X. Ni, Q. Fan, A.A. Baski, H. Morkoç, “Surface band bending of a-plane GaN studied by scanning Kelvin probe microscopy,” Appl. Phys. Lett. 88, 122104 (2006).

57. S. Sabuktagin, Y.-T. Moon, S. Dogan, A.A. Baski, H. Morkoç, “Observation of surface charging at the edge of a Schottky contact,” IEEE Electron Dev. Lett. 27, 211-213 (2006).

56. Y. Dong, R.M. Feenstra, D.W. Greve, J.C. Moore, M.D. Sievert, A.A. Baski, “Effects of hydrogen on the morphology and electrical properties of GaN grown by plasma-assisted molecular beam epitaxy,” Appl. Phys. Lett. 86, 121914 (2005).

55. S. Sabuktagin, S. Do?an, A.A. Baski, H. Morkoç, “Surface charging and current collapse in an AlGaN/GaN heterostructure field effect transistor,” Appl. Phys. Lett. 86, 083506 (2005).

54. M.A. Reshchikov, S. Sabuktagin, D.K. Johnstone, A.A. Baski, H. Morkoç, “Transient Photovoltage in GaN,” Phys. Stat. Sol. (c) 2, No. 7, 2813–2816 (2005).

53. S. Do?an, D. Johnstone, F. Yun, S. Sabuktagin, J. Leach, A.A. Baski, H. Morkoç, G. Li, B. Ganguly, “The effect of hydrogen etching on 6H-SiC studied by temperature-dependent current-voltage and atomic force microscopy,” Appl. Phys. Lett.85, 1547-1549 (2004).

52. C.-G. Stefanita, S. Pramanik, A. Banerjee, M. Sievert, A.A. Baski, S. Bandyopadhyay, “Electrochemically self-assembled nanostructure arrays,” J. Crystal Growth 268, 342-345 (2004).

51. J. McDonnough, A.A. Baski, S. McKelvey, D. Lewis, “Hands-On Physical Science for In-service Teachers,” J. of Mathematics and Science 7, 67-78 (2004).

50. J.W. Dickinson, J.C. Moore, A.A. Baski, “Au-Induced Faceting of the Si(5 5 12) Surface,” Surf. Sci. 561, 193-199 (2004).

49. J.L. Skrobiszewski, J.C. Moore, J.W. Dickinson, A.A. Baski, “STM Studies of Oxide Growth and Etching on Si(5 5 12),” J. Vac. Sci. Technol. A 22, 1667-1670 (2004).

48. J. Spradlin, S. Do?an, J. Xie, R. Molnar, A.A. Baski, H. Morkoç, “Investigation of forward and reverse current conduction in MBE-grown GaN films by conductive atomic force microscopy,” Appl. Phys. Lett.84, 4150-4152 (2004).

47. H. Morkoç, A.A. Baski, R. Molnar, J. Jasinski, Z. Liliental-Weber, “Current conduction paths in GaN,” IEEE Cat. No.03TH8675, 100-101 (2003).

46. P.H. Woodworth, J.C. Moore, A.A. Baski, “Scanning tunneling microscopy studies of the Cu:Si(5 5 12) system,” J. Vac. Sci. Technol. A 21, 1332-1335 (2003).

45. J.C. Moore, P.H. Woodworth, J.L. Skrobiszewski, A.A. Baski, “Oxygen etching of Si(5 5 12) and related surfaces,” Surf. Sci., 532-535, 711-715 (2003).

44. A.A. Baski, “Fabrication of Nanoscale Structures using STM and AFM,” Review Chapter in Advanced Semiconductor and Organic Nano-Techniques, Part 3, Edited by H. Morkoç, Academic Press (2003).

43. A.A. Pomarico, D. Huang, J. Dickinson, A.A. Baski, R. Cingolani, H. Morkoç, R. Molnar, “Current Mapping of GaN Films by Conductive Atomic Force Microscopy,” Appl. Phys. Lett. 82, 1890-1892 (2003).

42. D. Huang, M. A. Reshchikov, P. Visconti, F. Yun, A. A. Baski, T. King, H. Morkoç, J. Jasinski, Z. Liliental-Weber, C. W. Litton, “Comparative study of Ga- and N-polar GaN films grown on sapphire substrates by molecular beam epitaxy,” J. Vac. Sci. Technol. B 20, 2256-2264 (2002).

41. D. Huang, M.A. Reshchikov, F. Yun, T. King, A.A. Baski, H. Morkoç, “Defect reduction with quantum dots in GaN grown on sapphire substrates by molecular beam epitaxy,” Appl. Phys. Lett. 80, 216-218 (2002).

40. A.A. Baski, K.M. Saoud, K.M. Jones, “1-D Nanostructures Grown on the Si(5 5 12) Surface,” Appl. Surf. Sci. 182, 216-222 (2001).

39. Huang, P. Visconti, K.M. Jones, M.A. Reshchikov, F. Yun, A.A. Baski, T. King, H. Morkoç, “Dependence of GaN polarity on the parameters of the buffer layer grown by molecular beam epitaxy,” Appl. Phys. Lett. 78, 4145-4147 (2001).

38. A.A. Baski, K.M. Saoud, “Au-Induced Faceting of Si(5 5 12),” J. Cluster Sci. 12, 521-535 (2001).

37. K.M. Jones, P. Visconti, F. Yun, A.A. Baski, H. Morkoç, “Investigation of Inversion Domains in GaN by Electric Force Microscopy,” Appl. Phys. Lett. 78, 2497-2499 (2001).

36. A.A. Baski, S.C. Erwin, M.S. Turner, K.M. Jones, J.W. Dickinson, J.A. Carlisle, “Morphology and Electronic Structure of the Ca/Si(111) System,” Surf. Sci 476, 22-34 (2001).

35. D. Huang, P. Visconti, M.A. Reshchikov, F. Yun, T. King, A.A. Baski, C.W. Litton, J. Jasinski, Z. Liliental-Weber, H. Morkoç, “Polarity of GaN grown on sapphire by molecular beam epitaxy with different buffer layers,” Phys. Stat. Sol. A 18, 571-574 (2001).

34. P. Visconti, D. Huang, M.A. Reshchikov, F. Yun, T. King, A.A. Baski, R. Cingolani, C.W. Litton, J. Jasinski, Z. Liliental-Weber, H. Morkoç, “Investigation of defects and polarity in GaN using hot wet etching, atomic force and transmission electron microscopy and convergent beam electron diffraction,” Phys. Stat. Sol. B 228, 513-517 (2001).

33. F. Yun, D. Huang, M.A. Reshchikov, T. King, A.A. Baski, C.W. Litton, J. Jasinski, Z. Liliental-Weber, H. Morkoç, “A Comparative Study of MBE-grown GaN Films Having Predominantly Ga- or N-polarity,” Phys. Stat. Sol. B 228, 543-547 (2001).

32. R. Rinaldi, R. Cingolani, K.M. Jones, A.A. Baski, H. Morkoç, A. Di Carlo, J.Widany, F. Della Sala, P. Lugli, “Scanning tunneling current-voltage spectroscopy on poly(p-phenylene vinylene) films: A nanoscale probe for the electronic conduction,” Phys. Rev. B 63, 75311-1,5 (2001).

31. A.A. Baski, K.M. Jones, K.M. Saoud, “STM Studies of 1-D Noble Metal Growth on Silicon,” Ultramicroscopy 86, 23-30 (2001).

30. J. Cui, A. Sun, M. Reshchikov, F. Yun, A.A. Baski, H. Morkoç, “Preparation of Sapphire for High Quality III-Nitride Growth,” MRS Internet J. Nitride Semicond. Res. 5, 7 (2000).

29. S.C. Erwin, A.A. Baski, L.J. Whitman, R.E. Rudd, “Frenkel-Kontorova Model of Vacancy-Line Interactions on Ga/Si(112),” Phys. Rev. Lett. 83, 1818-1821 (1999).

28. K.M. Jones, H.H. Song, A.A. Baski, “STM and STS Studies of 1-D Row Growth: Ag on Si(5 5 12),” J. Cluster Science 10, 573-580 (1999).

27. H.H. Song, K.M. Jones, A.A. Baski, “Growth of Ag Rows on Si(5 5 12),”J. Vac. Sci. Technol. A 17, 1696-1699 (1999).

26. S.R. Blankenship, H.H. Song, A.A. Baski, J.A. Carlisle, “Reconstructions of Ag on High-index Silicon Surfaces,” J. Vac. Sci. Technol. A 17, 1615-1620 (1999).

25. A.A. Baski, S.C. Erwin, L.J. Whitman, “The Structure of Si(112):Ga-(N×1) Reconstructions,” Surf. Sci. 423, L265-270 (1999).

24. A.A. Baski, S.C. Erwin, L.J. Whitman, “The Structure of Silicon Surfaces from (001) to (111),” Surf. Sci. 392, 69-85 (1997).

23. S.C. Erwin, A.A. Baski, L.J. Whitman, “Structure and Stability of Si(114)-(2×1),” Phys. Rev. Lett. 77, 687-690 (1996).

22. A.A. Baski, L.J. Whitman, “Ga-induced Restructuring of Si(112) and Si(337),” J. Vac. Sci. Technol. B, 14, 992-994 (1996).

21. A.A. Baski, S.C. Erwin, L.J. Whitman, “A Stable High-Index Surface of Silicon: Si(5 5 12),” Science 269, 1556-1560 (1995).

20. A.A. Baski, L.J. Whitman, “A Scanning Tunneling Microscopy Study of Hydrogen Adsorption on Si(112),” J. Vac. Sci. Technol. A 13, 1469-1472 (1995).

19. A.A. Baski, L.J. Whitman, “Quasiperiodic Nanoscale Faceting of High-Index Si Surfaces,” Phys. Rev. Lett. 74, 956-959 (1995).

18. K. Bierbaum, M. Grunze, A.A. Baski, L.F. Chi, W. Shrepp, H. Fuchs, “Growth of Self-assembled n-alkyl trichlorosilane Films on Si(100) Investigated by Atomic Force Microscopy,” Langmuir 11, 2143-2150 (1995).

17. A.A. Baski, H. Fuchs, “Epitaxial Growth of Silver on Mica as Studied by AFM and STM,” Surf. Sci. 313, 275-288 (1994).

16. R. Shioda, A. Kawazu, A.A. Baski, C.F. Quate, J. Nogami, “Bi on Si(111): Two phases of the ?3×?3 Surface Reconstruction,” Phys. Rev. B 48, 4895-4898 (1993).

15. C. Wigren, J.N. Andersen, R. Nyholm, U.O. Karlsson, J. Nogami, A.A. Baski, C.F. Quate, “Adsorption-site Determination of Ordered Yb on Si(111) Surfaces,” Phys. Rev. B 47, 9663-9668 (1993).

14. A.A. Baski, C.F. Quate, J. Nogami, “Tin-induced Reconstructions of the Si(100) Surface,” Phys. Rev. B 44, 11167-11177 (1991).

13. J. Nogami, A.A. Baski, C.F. Quate, “Aluminum on the Si(100) surface: Growth of the First Monolayer,” Phys. Rev. B 44, 1415-1418 (1991).

12. A.A. Baski, J. Nogami, C.F. Quate, “Indium-induced Reconstructions of the Si(100) Surface,” Phys. Rev. B 43, 9316-9319 (1991).

11. A.A. Baski, J. Nogami, C.F. Quate, “Evolution of the Si(100)2×2-In Reconstruction,” J. Vac. Sci. Technol. A 9, 1946-1950 (1991).

10. J. Nogami, A.A. Baski, C.F. Quate, “Structure of the Sb-terminated Si(100) Surface,” Appl. Phys. Lett. 58, 475-477 (1991).

9. M. Richter, J.C. Woicik, J. Nogami, P. Pianetta, K.E. Miyano, A.A. Baski, T. Kendelewicz, C.E. Bouldin, W.E. Spicer, C.F. Quate, I. Lindau, “Surface Extended-X-Ray-Absorption Fine Structure and Scanning Tunneling Microscopy of Si(001)2×1 Sb,” Phys. Rev. Lett. 65, 3417-3420 (1990).

8. J. Nogami, A.A. Baski, C.F. Quate, “?3×?3 to 6×6 Phase Transition on the Au/Si(111) Surface,” Phys. Rev. Lett. 65, 1611-1614, (1990).

7. A.A. Baski, J. Nogami, C.F. Quate, “Si(111)-5×1-Au Reconstruction as Studied by Scanning Tunneling Microscopy,” Phys. Rev. B 41, 10247-10249 (1990).

6. J. Nogami, A.A. Baski, C.F. Quate, “Behavior of Gallium on Vicinal Si(100) Surfaces,” J. Vac. Sci. Technol. A 8, 3520-3523 (1990).

5. A.A. Baski, J. Nogami, C.F. Quate, “Gallium Growth and Reconstruction on the Si(100) Surface,” J. Vac. Sci. Technol. A 8, 245-248 (1990).

4. M.D. Kirk, J. Nogami, A.A. Baski, D.B. Mitzi, A. Kapitulnik, T.H. Geballe, C.F. Quate, “The Origin of the Superstructure in Bi2Sr2CaCu2O8+d as Revealed by Scanning Tunneling Microscopy,” Science 242, 1673-1675 (1988).

3. A.A. Baski, T.R. Albrecht, C.F. Quate, “Tunnelling Accelerometer,” J. Microscopy, 152 (1), 73-76 (1988).

2. A.A. Baski, W.F. Oliver, J.F. Scott, “Dielectric Anomalies Related to Domain Walls in Ferroelectric CsD2AsO4 ,” Ferro. Lett. 7, 171-178 (1987).

1. A.A. Baski, A.A. Bartlett, “Where is the V = 0 Equipotential?” Am. J. Phys. 54, 854 (1986).


Publications in Conference Proceedings:

32.    J.D. McNamara, M.A. Foussekis, A.A. Baski, X. Li, V. Avrutin, H. Morkoç, J.H. Leach, T. Paskova, K. Udwary, E. Preble, M.A. Reshchikov, "Electrical and optical properties of bulk GaN substrates studied by Kelvin probe and photoluminescence," Proc. of the 4th International Symposium on Growth of III-Nitrides (ISGN), Physica Status Solidi C, 10, 3 (2013).

31.    J.D. McNamara, M. Foussekis, H. Liu, H. Morkoç, M.A. Reshchikov, A.A. Baski,  "Temperature Dependent Behavior of the SPV for n-type GaN," Proc. of SPIE 8262, 826213 (2012).

30.    J.D. McNamara, J.D. Ferguson, M. Foussekis, I. Ruchala, M.A. Reshchikov, A.A. Baski, H. Liu, V. Avrutin, H. Morkoç, "Surface Characterization of Ga-doped ZnO layers," Symposium MM on Transparent Conducting Oxides and Applications / Fall Meeting of the Materials-Research-Society (MRS), Mat. Res. Soc. Symp. Proc., 1315, 77-82 (2011).

29.    M. Foussekis, A.A. Baski, M.A. Reshchikov, "Electrical and optical properties of GaN studied by surface photovoltage and photoluminescence," Proc. of the International Workshop on Nitride Semiconductors (IWN) / Fall Meeting of the European-Materials-Research-Society (E-MRS), Physica Status Solidi C, 8 (2011).

28.    M. Foussekis, X. Ni, H. Morkoç, M.A. Reshchikov, A.A. Baski, "Kelvin Probe Measurements of p-type GaN," Proc. of SPIE 7939, 79390A (2011).

27.    M. Foussekis, J.D. Ferguson, X. Ni, H. Morkoç, M.A. Reshchikov, A.A. Baski, "Effect of UV exposure on the surface charge behavior for GaN," Proc. of SPIE 7602, 76020Y (2010).

26.    J. Lee, X. Ni, M. Wu, X. Li, R. Shimada, Ü. Özgür, A.A. Baski, H. Morkoç, T. Paskova, G. Mulholland, K.R. Evans, "Internal quantum efficiency of m-plane InGaN on Si and GaN," Proc. of SPIE 7602, 76021N (2010).

25.    X. Ni, M. Wu, J. Lee, X. Li, A.A. Baski, Ü. Özgür, H. Morkoç, "Non-polar m-plane GaN on patterned Si(112) substrates by metalorganic chemical vapor deposition", Proc. of SPIE 7602, 760220 (2010).

24.    M. Foussekis, J.D. Ferguson, A.A. Baski, H. Morkoç, M.A. Reshchikov, "Role of the surface in the electrical and optical properties of GaN," Proc. of the 25th International Conference on Defects in Semiconductors, Physica B, 404, 4892-4895 (2009).

23.    M.A. Reshchikov, M. Foussekis, A.A. Baski, H. Morkoç, "Effect of ambient on electrical and optical properties of GaN," Proc. of SPIE 7216, 721614 (2009).

22.    M. Foussekis, A.A. Baski, M. A. Reshchikov, “Electrical and optical properties of GaN and ZnO studied by surface photovoltage,” Mat. Res. Soc. Symp. Proc. 1109E B6-28 (2008), submitted 11/28/08.

21.    J.C. Moore, M.A. Reshchikov, J.E. Ortiz, J. Xie, H. Morkoç, A.A. Baski, “Investigation of charge trapping at the oxide/semiconductor interface for MBE-grown GaN films,” Gallium Nitride Materials and Devices III (Ed. Morkoç et al.), Proc. of SPIE 6894, 68940B1-9 (2008).

20.    V. Kasliwal, J.C. Moore, X. Ni, H. Morkoç, A.A. Baski, “AFM and CAFM studies of ELO GaN films,” Gallium Nitride Materials and Devices II (Ed. Morkoç & Litton), Proc. of SPIE 647308 (2007).

19.    X. Ni, Ü. Özgür, H. Morkoç, A.A. Baski, Z. Liliental-Weber, H.O. Everitt, “Two-step epitaxial lateral overgrowth of a-plane GaN by MOCVD,” Gallium Nitride Materials and Devices II (Ed. Morkoç & Litton), Proc. of SPIE 6473, 647303 (2007).

18.    V. Avrutin, Ü. Özgür, N. Izyumskaya, S. Chevtchenko, J. Leach, J.C. Moore, A.A. Baski, C. Litton, H.O. Everitt, K.T. Tsen, M. Abouzaid, P. Ruterana, H. Morkoç, “Carrier relaxation and stimulated emission in ZnO nanorods grown by catalyst-assisted vapor transport on various substrates,” Zinc Oxide Materials and Devices II (Ed. Teherani & Litton), Proc. of SPIE 6474, 64741M (2007).

17.    J.C. Moore, J.E. Ortiz, J. Xie, H. Morkoç, A.A. Baski, “Study of leakage defects on GaN films by conductive atomic force microscopy,” J. of Physics: Conf. Series: 61, 90-94 (2007).

16.    V. Avrutin, Ü. Özgür, N. Izyumskaya, S. Chevtchenko, J. Leach, J.C. Moore, A. A. Baski, H. O. Everitt, K. T. Tsen, P. Ruterana, H. Morkoç, “Morphology and optical properties of ZnO nanorods grown by catalyst-assisted vapor transport on various substrates,” Mat. Res. Soc. Symp. Proc. 0963-Q15-20 (2006).

15.    J.C. Moore, K.A. Cooper, J. Xie, H. Morkoç, A.A. Baski, “Conductive atomic force microscopy study of MBE GaN films,” Gallium Nitride Materials and Device (Ed. Litton), Proc. of SPIE 6121, 61210J-1,6 (2006).

14.    S. Chevtchenko, Q. Fan, C.W. Litton, A.A. Baski, H. Morkoç, “Effects of rapid thermal annealing treatment on the surface band bending of n-type GaN studied by surface potential electric force microscopy,” ICSCRM 2005 Proceedings, Transtech. Publ. Inc. (2006).

13.    S. Chevtchenko, M.S. Reshchikov, K. Zhu, Y.T. Moon, A.A. Baski, H. Morkoç, “Effects of GaN passivation with SiO2 and SiNx studied by photoluminescence and surface potential electric force microscopy,” Mat. Res. Soc. Symp. Proc. 892, 0892-FF23-09 (2005).

12.    E. Morris, J.W. Dickinson, M.L. Willis, and A.A. Baski, “Gadolinium Nanowire Growth on High-Index Silicon Surfaces,” Proc. of Intl. Symp. on Clusters and Nanoassemblies,  (Ed. Jena, Khanna, Rao) World Scientific Publishing Co. , pp. 175-180 (2005).

11.    S. Doğan, J. Spradlin, R. Molnar, A.A. Baski, H. Morkoç, “Current conduction mechanisms of heteroepitaxial and homoepitaxial GaN films grown by MBE,” Conf. Proc., 2003 Intl. Symp. on Compound Semiconductors (ISCS), p. 8-14 (IEEE, 2004).

10.    L. He, X. Gu, J. Xie, F. Yun, A.A. Baski, H. Morkoç, “GaN Layers Re-Grown on Etched GaN Templates by Plasma Assisted Molecular Beam Epitaxy,” Mat. Res. Soc. Symp. Proc. 798, Y10.64.1-4 (2003).

 9.    S. Dogan, J. Spradlin, J. Xie, A.A. Pomarico, R. Cingolani, D. Huang, J. Dickinson, A.A. Baski, H. Morkoç, R. Molnar. “Investigation of epitaxial GaN films by conductive atomic force microscopy,” Mat. Res. Soc. Symp. Proc. 764, C7.3.1-6, 395-400 (2003).

 8.    F. Yun, P. Visconti, K.M. Jones, A.A. Baski, H. Morkoç, A. Passaseo, E. Piscopiello, M. Catalano, R. Cingolani, “Characterization of Inversion Domains in GaN by Electric Force Microscopy in Conjunction with Transmission Electron Microscopy and Wet Chemical Etching,” Mat. Res. Soc. Symp. Proc. 680E, E4.8.1-E4.8.6 (2001).

 7.    K.M. Jones, P. Visconti, F. Yun, M.A. Reshchikov, A.A. Baski, H. Morkoç, “Surface structure and polarization effects in GaN Thin films as Studied by Electric Force microscopy,” Mat. Res. Soc. Symp. Proc. 639, G7.9.1-G7.9.6 (2001).

 6.    M.A. Reshchikov, J. Cui, F. Yun, A.A. Baski, M.I. Nathan, H. Morkoç, “GaN Based Quantum Dot Heterostructures,” Mat. Res. Soc. Symp. Proc. 622, T4.5.1 – T4.5.9 (2000).

 5.    K.M. Jones, K.M. Saoud, A.A. Baski, “Noble Metal Row Growth on Si(5 5 12),” Cluster and Nanostructure Interfaces, (Ed. Jena, Khanna, Rao) p. 49-54 (World Scientific, Singapore, 2000).

 4.    E.S. Bowman, M.F. Bishop, T. McMullen, A.A. Baski, “1-D Monte Carlo Simulation of Cluster Growth,” Ibid., p. 563-568.

 3.    M.S. Turner, K.M. Jones, A.A. Baski, J.A. Carlisle, “Formation of 1D Ca Rows on Si(111),” Ibid., p. 569-575.

 2.    A.S. Sun, K.M. Jones, A.A. Baski, “Defect Structures on the Si(5 5 12)2×1 Surface,” Ibid., p. 607-612.

 1.    A.A. Baski, C.A. Lang, J. Nogami, C.F. Quate, “Surface Order and Disorder Studied by Scanning Tunneling Microscopy,” Ordering at Surfaces and  Interfaces, Proc. of the 3rd NEC Symp., Hakone, Japan, 1990 (Springer, 1992).

Email comments or questions about this Web site to aabaski@vcu.edu
This page does not represent an official position of Virginia Commonwealth University.