Papers

Papers People

 

  1. “Au-Induced Faceting of the Si(5 5 12) Surface,” J.W. Dickinson, J.C. Moore, A.A. Baski, submitted to Surf. Sci. on 12/03. [PDF]

  2.  “Fabrication of Nanoscale Structures using STM and AFM,” A.A. Baski, Review Chapter in Advanced Semiconductor and Organic Nano-Techniques, Part 3, Edited by H. Morkoc, Academic Press, in press (2002). [PDF]

  3.  “Defect reduction with quantum dots in GaN grown on sapphire substrates by molecular beam epitaxy,” D. Huang, M.A. Reshchikov, F. Yun, T. King, A.A. Baski, H. Morkoη, Appl. Phys. Lett. 80, 216-218 (2002). [PDF]

  4. “1-D Nanostructures Grown on the Si(5 5 12) Surface,” A.A. Baski, K.M. Saoud, K.M. Jones, Appl. Surf. Sci. 182, 216-222 (2001). [PDF]

  5. “Dependence of GaN polarity on the parameters of the buffer layer grown by molecular beam epitaxy,” Huang, P. Visconti, K.M. Jones, M.A. Reshchikov, F. Yun, A.A. Baski, T. King, H. Morkoη, Appl. Phys. Lett. 78, 4145-4147 (2001). [PDF]

  6. “Au-Induced Faceting of Si(5 5 12),” A.A. Baski, K.M. Saoud, J. Cluster Sci. 12, 521-535 (2001). 

  7. “Investigation of Inversion Domains in GaN by Electric Force Microscopy,” K.M. Jones, P. Visconti, F. Yun, A.A. Baski, H. Morkoη, Appl. Phys. Lett. 78, 2497-2499 (2001). [PDF]

  8. “Morphology and Electronic Structure of the Ca/Si(111) System,” A.A. Baski, S.C. Erwin, M.S. Turner, K.M. Jones, J.W. Dickinson, J.A. Carlisle, Surf. Sci 476, 22-34 (2001).  [PDF]

  9.  “Scanning tunneling current-voltage spectroscopy on poly(p-phenylene vinylene) films: A nanoscale probe for the electronic conduction,” R. Rinaldi, R. Cingolani, K.M. Jones, A.A. Baski, H. Morkoη, A. Di Carlo, J.Widany, F. Della Sala, P. Lugli, Phys. Rev. B 63, 75311-1,5 (2001). [PDF]

  10.  “STM Studies of 1-D Noble Metal Growth on Silicon,” A.A. Baski, K.M. Jones, K.M. Saoud, Ultramicroscopy 86, 23-30 (2001).  [PDF]

  11.  “1-D Monte Carlo Simulation of Cluster Growth,” E.S. Bowman, M.F. Bishop, T. McMullen, A.A. Baski, Cluster and Nanostructure Interfaces, edited by P. Jena, S. N. Khanna, and B. K. Rao, p. 563-568 (World Scientific, Singapore, 2000). [PDF]

  12. “Defect Structures on the Si(5 5 12)-2Χ1 Surface,” A.S. Sun, K.M. Jones, A.A. Baski, Cluster and Nanostructure Interfaces, edited by P. Jena, S. N. Khanna, and B. K. Rao, p. 607-612 (World Scientific, Singapore, 2000). [PDF]

  13. “Frenkel-Kontorova Model of Vacancy-Line Interactions on Ga/Si(112),” S.C. Erwin, A.A. Baski, L.J. Whitman, R.E. Rudd , Phys. Rev. Lett. 83, 1818-1821 (1999).  [PDF]

  14. “STM and STS Studies of 1-D Row Growth: Ag on Si(5 5 12),” K.M. Jones, H.H. Song, A.A. Baski, J. Cluster Science 10, 573-580 (1999). [PDF]

  15.  “Growth of Ag Rows on Si(5 5 12),”H.H. Song, K.M. Jones, A.A. Baski, J. Vac. Sci. Technol. A 17, 1696-1699 (1999). [PDF]

  16. “Reconstructions of Ag on High-index Silicon Surfaces,” S.R. Blankenship, H.H. Song, A.A. Baski, J.A. Carlisle, J. Vac. Sci. Technol. A 17, 1615-1620 (1999). [PDF]

  17. “The Structure of Si(112):Ga-(NΧ1) Reconstructions,” A.A. Baski, S.C. Erwin, L.J. Whitman, Surf. Sci. 423, L265-270 (1999). [PDF]

  18. “The Structure of Silicon Surfaces from (001) to (111),” A.A. Baski, S.C. Erwin, L.J. Whitman, Surf. Sci. 392, 69-85 (1997).

  19. “Structure and Stability of Si(114)-(2Χ1),” S.C. Erwin, A.A. Baski, L.J. Whitman, Phys. Rev. Lett. 77, 687-690 (1996). [PDF]

  20. “Ga-induced Restructuring of Si(112) and Si(337),” A.A. Baski, L.J. Whitman, J. Vac. Sci. Technol. B, 14, 992-994 (1996). 

  21. “A Stable High-Index Surface of Silicon:  Si(5 5 12),”A.A. Baski, S.C. Erwin, L.J. Whitman, Science 269, 1556-1560 (1995).

  22. “A Scanning Tunneling Microscopy Study of Hydrogen Adsorption on Si(112),” A.A. Baski, L.J. Whitman, J. Vac. Sci. Technol. A 13, 1469-1472 (1995). [PDF]

  23. “Quasiperiodic Nanoscale Faceting of High-Index Si Surfaces,” A.A. Baski, L.J. Whitman, Phys. Rev. Lett. 74, 956-959 (1995). [PDF]

 

 
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